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UBA2025
CFL power IC
Rev. 01 -- 16 October 2009 Product data sheet
1. General description
The UBA2025 is a high voltage power IC intended to drive and control a Compact Fluorescent Lamp (CFL). It contains a half bridge power circuit, an oscillator, and a control circuit for starting up, preheating, ignition, lamp burning, and protection.
2. Features
I I I I I I I I I Two internal 600 V, 3 max NMOST half bridge powers For steady state half bridge currents up to 280 mA For ignition half bridge currents up to 1.5 A Adjustable preheat and ignition time Adjustable preheat current Adjustable lamp power Lamp temperature stress protection at higher mains voltages Capacitive mode protection Protection against too low a drive voltage for the power MOSFETs.
3. Applications
I 5 W to 25 W CFLs provided that the maximum junction temperature is not exceeded.
4. Ordering information
Table 1. Ordering information Package Name UBA2025T SO16L Description plastic small outline package; 16 leads; body width 7.5 mm Version SOT162-1 Type number
NXP Semiconductors
UBA2025
CFL power IC
5. Block diagram
VS 6 RHV 14 IREF CF 11 13 CI 15 FS 5
BOOTSTRAP T1
16 4
SUPPLY
OSCILLATOR
LEVEL SHIFTER
HS DRIVER
VDC S1A
BANDGAP REFERENCE
T2
3 1
S1B PGND GLI GLO
CPAV
9
TIMING
NON OVERLAP
LS DRIVER
2 7
RS
10
SHUNT CURRENT MONITOR
CONTROL
UBA2025
12 SGND
8 GND
014aaa936
Fig 1.
Block diagram
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6. Pinning information
6.1 Pinning
PGND GLI S1B S1A FS VS GLO GND
1 2 3 4 5 6 7 8
014aaa923
16 VDC 15 CI 14 RHV 13 CF 12 SGND 11 IREF 10 RS 9 CPAV
UBA2025
Fig 2.
Pin assignment
6.2 Pin description
Table 2. Symbol PGND GLI S1B S1A FS VS GLO GND CPAV RS IREF SGND CF RHV CI VDC Pin description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Description power ground LS gate power MOSFET, must be connected to GLO half bridge point, must be connected to S1A half bridge point, must be connected to S1B floating supply IC supply LS driver output, must be connected to GLI diepad ground preheat and averaging capacitor current monitoring input reference resistor signal ground oscillator capacitor start-up/feed forward input integrating capacitor high voltage power input
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UBA2025
CFL power IC
7. Functional description
7.1 Introduction
The IC is an integrated circuit for electronically ballasted compact fluorescent lamps and its derivatives, up to a nominal mains voltage of 230 V (RMS). It provides all the necessary functions for proper preheat, ignition and on-state operation of the lamp. Besides the control function, the IC provides the level shift and drive for the two internal power MOSFETs.
7.2 Initial start-up
Initial start-up is achieved by charging CS9 (see Figure 6) with the current applied to pin RHV. The start-up of the circuit is such that (see Figure 1) T2 shall be conductive and T1 shall be non-conductive, in order to make sure that CBOOT gets charged. This start-up state is reached for a supply voltage Vrst, this is the voltage level at pin VS at which the circuit will be reset to the initial state and maintained until the low voltage supply (VVS) reaches a value of Vstartup.
7.3 Oscillation
If the low voltage supply (VVS) has reached the value of Vstartup the circuit starts oscillating in the preheat state. The internal oscillator is a current-controlled circuit which generates a sawtooth waveform. The frequency of the sawtooth is determined by the capacitor CF and the current out of pin CF (mainly set by RIREF). The sawtooth frequency is twice the frequency of the signal across the load. The IC brings alternately the power MOSFETs T1 and T2 into conduction with a duty cycle of approximately 50%. Figure 3 represents the timing of the IC. The circuit block 'non-overlap' generates a non-overlap time tno when T1 and T2 are not conducting. This is dependent on the reference current.
start-up VCF 0 internal clock
0
V(GT1-S1) 0 V(GT2) 0 time
mgs991
tno
tno
Fig 3.
Oscillator timing
7.4 Operation in preheat mode
The circuit starts oscillating at a frequency of approximately 2.5fbtm (108 kHz). The frequency will gradually decrease until a defined value of the current through RSHUNT is reached (see Figure 4). The slope of the decrease in frequency is determined by the
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CFL power IC
capacitor connected to pin CI. The frequency during preheating will be approximately 90 kHz. This frequency is well above the resonant frequency of the load, which means that the lamp is off. The load consists of L2, C5 and the electrode resistance only (see Figure 6). The preheat time is determined by the capacitor connected to pin CPAV. The circuit can be locked in the preheat state by connecting pin CPAV to ground. During preheating the circuit monitors the load current by measuring the voltage drop over external resistor RSHUNT at the end of conduction of T2 with decision level Vshunt. The frequency is decreased as long as VRS > Vshunt. The frequency is increased for VRS < Vshunt.
fstart
fbtm preheat state ignition state burn state time
mgs992
Fig 4.
Operation in preheat mode
7.5 Ignition state
The RS current monitoring function changes from Vshunt regulation to capacitive mode protection at the end of the preheat time. Normally this results in a further frequency decrease down to the bottom frequency fbtm (approximately 43 kHz). The frequency change per ms is lowered with respect to the frequency change in the preheat mode. During the downward frequency sweep the circuit sweeps through the resonant frequency of the load. A high voltage will then appear across the lamp. This voltage will normally ignite the lamp.
7.6 Failure to ignite
Excessive current levels may occur when the lamp fails to ignite. The IC does not limit these currents in any manner.
7.7 Transition to the burn state
Assuming that the lamp has ignited during the downward frequency sweep, the frequency normally decreases to the bottom frequency. The IC can transit to the burn state in two ways:
* In the event that the bottom frequency is not reached, the transition is made after
reaching the ignition time tign.
* As soon as the bottom frequency is reached.
The bottom frequency is determined by resistor RIREF and capacitor CF.
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Product data sheet
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CFL power IC
7.8 Feed forward frequency
Above a defined voltage level at pin VDC the oscillation frequency also depends on the supply voltage of the half bridge (see Figure 5). The current for the current controlled oscillator is in this feed forward range and is derived from the current through RHV (this is similar to pin RHV current). The feed forward frequency is proportional to the average value of the current (within its operating range) through RHV. The feed forward frequency is clamped for currents beyond the operating range (i.e. between 1.0 mA and 1.6 mA). In order to prevent feed forward of the ripple on the input voltage on pin VDC, the ripple is filtered out. The capacitor connected to pin CPAV is used for this purpose. This pin is also used in the preheat state and the ignition state for timing (tph and tign).
f (kHz) feed-forward range bottom frequency
IRHV (mA)
mgs993
Fig 5.
Feed forward frequency
7.9 Capacitive mode
When the preheat mode is completed, the IC will protect the power circuit against losing the zero voltage switching condition and getting too close to the capacitive mode of operation. This is detected by monitoring the voltage across RSHUNT. If the voltage at pin RS is below Vth(capm) the capacitive mode threshold voltage at the time of turn-on of T2, then capacitive mode operation is assumed. Consequently, the frequency will be increased as long as the capacitive mode is detected. The frequency decreases down to the feed forward frequency if no capacitive mode is detected. Frequency modulation is achieved via pin CI.
7.10 IC supply
Initially, the IC is supplied from the bus voltage VDC by the current through RHV. This current charges the supply capacitor CS9 via an internal diode. As soon as VS exceeds Vstartup, the circuit starts oscillating. After the preheat phase is finished, pin RHV is connected to an internal resistor (RRHV); prior to this the pin is internally connected to pin VS. The voltage level at pin RHV thus drops from (VS + Vd) to a voltage equal to the RHV pin current x RRHV. The capacitor CS9 at pin VS will now be charged via the snubber capacitor CS7. Excess charge is drained by an internal clamp that turns on at the clamp voltage (Vclamp) on pin VS.
7.11 Minimum gate source voltage of T1 and T2
The high side driver is supplied via capacitor CBOOT. CBOOT is charged via the bootstrap switch during the on-periods of T2. The IC stops oscillating at a voltage level Vstop. Given a maximum charge consumption on the gate of T1 (G1) of 1 nC/V, this safeguards the minimum drive voltages V(G1-S1) for the high side driver; see Table 3.
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Product data sheet
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CFL power IC
Minimum gate voltages Voltage 8 V (min.) 7 V (min.) 6 V (min.)
Table 3. Frequency < 75 kHz
75 kHz to 80 kHz > 85 kHz
The drive voltage at gate of T2 (G2) will exceed the drive voltage of the high side driver.
7.12 Frequency and change in frequency
At any point in time during oscillation, the circuit will operate between fbtm and fstart. Any change in frequency will be gradual, no steps in frequency will occur. Changes in frequency caused by a change in voltage at pin CI, show a rather constant df/dt over the entire frequency range. The following rates are realised (at a frequency of 85 kHz and a 100 nF connected to pin CI):
* For any increase in frequency the df/dt will be between 15 kHz/ms and 37.5 kHz/ms * During preheat and normal operation: the df/dt for a decrease in frequency is between
-6 kHz/ms and -15 kHz/ms
* During the ignition phase: the df/dt for a decrease in frequency is between
-150 Hz/msand -375 Hz/ms.
7.13 Ground pins
Pin PGND and pin GND are the ground references of the IC with respect to the application. Pin SGND provides a local ground reference for the components connected to pins CPAV, CI, IREF and CF. Other external connections to pin SGND are not preferred. The sum of currents flowing out of the pins CPAV, CI, IREF, CF and SGND must remain zero at any time. Pin GND is internally connected to SGND.
7.14 Charge coupling
Due to parasitic capacitive coupling to the high voltage circuitry, all pins are exposed to a repetitive charge injection. Given the typical application in figure 6, the pins IREF and CF are sensitive to this charge injection. For the rating Qcoup a safe functional operation of the IC is guaranteed, independent of the current level. Charge coupling at current levels below 50 A will not interfere with the accuracy of the Vth(capm) and Vshunt levels. Charge coupling at current levels below 20 A will not interfere with the accuracy of any parameter.
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Product data sheet
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CFL power IC
8. Limiting values
Table 4. Symbol Vi(VDC) VFS Iclamp ID VI SR Tamb Tj Tstg Qcoup VESD Limiting values Parameter Conditions during 0.5 s voltage on pin FS clamp current drain current input voltage slew rate ambient temperature junction temperature storage temperature coupling charge electrostatic discharge voltage at pins IREF and CF; normal operation human body model pins 1, 8, 9, 10, 11, 12, 13, 14, 15 pin 4, 5, 6 pin 7 pin 2, 3, 16 machine model pins 1, 3, 4, 5, 6, 8, 9, 10, 11, 12, 13, 14, 15, 16 pin 2 pin 7
[1] [2] Equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor. Equivalent to discharging a 200 pF capacitor through a 0.75 H coil and a 10 resistor.
[2] [1]
Min -2.5 -1.5 -4 -40 -40 -55 -8 -
Max 556 600 14 17 35 1.5 1.5 +2.5 +2.5 +4 +150 +150 +150 +8 3000 1500 1000 < 500 250 200 <125
Unit V V V V mA A A V V V/ns C C C pC V V V V V V V
input voltage on pin VDC operating operating, with respect to S1A and S1B during 0.5 s, with respect to S1A and S1B during 0.5 s on T1; pulsed; tp limited by Tj(max); T < Tj(max) on T2; pulsed; tp limited by Tj(max); T < Tj(max) on pin RS; transient of 50 ns on pin RS; operating normaly pins S1A and S1B with respect to GND
9. Thermal characteristics
Table 5. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air; SO16L package Typ 80 Unit K/W
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CFL power IC
10. Characteristics
Table 6. Characteristics Tamb = 25 C; voltage on pin VS = 11 V; VFS - S1A and S1B voltage= 11 V, GLI and GLO voltage measured with respect to PGND; currents are positive when flowing into the IC; unless otherwise specified. Symbol Ileak Start-up state Vrst Vstartup Vstop Vhys Istb V(RHV-VS) Vclamp(startup) Iclamp Preheat mode fstart tg Ich start frequency conduction time charge current CI pin voltage = 0 V T1; T2; fstart = 108 kHz on pin CI; pin CI voltage = 0 V; pin RS voltage = -0.3 V on pin CPAV; pin CPAV voltage = 1 V Idch discharge current on pin CI; pin CI voltage = 0 V; pin RS voltage = -0.9 V on pin CPAV; pin CPAV voltage= 1 V tph VM(CPAV) Vctrl Ich fbtm tign fbtm tg tno Itot Vctrl Vref Ron preheat time peak voltage difference on pin CPAV control voltage charge current bottom frequency ignition time bottom frequency conduction time non-overlap time total current control voltage reference voltage on-state resistance half bridge power for supply; f = 43 kHz for capacitive mode control
[4] [5]
Parameter leakage current reset voltage start-up voltage stop voltage hysteresis voltage standby current
Conditions high voltage pins
Min 4.0 9.55 1.5
Typ 5.5
Max 10 6.5
Unit A V
High voltage supply
11.35 11.95 12.55 V 10.15 10.75 V 1.8 200 0.8 0.3 14 108 3.2 44 6.0 93 5.95 666 2.5 -600 1 42.9 625 2.0 250 1.0 0.4 35 118 50 107 733 -564 1.2 V A V V mA kHz s A A A A s V mV A kHz ms
on pin VS
[1]
150 0.7
voltage difference pin RHV RHV pin current = 1.0 mA and pin VS start-up clamp voltage difference clamp current VS pin voltage < 17 V
[2]
0.2 98 38 79 599 -
measured during preheat timing at pin RS on pin CI; CI pin voltage = 1.5 V; f = 85 kHz pin CI voltage at clamp level
[3]
-636 0.8 -
Frequency sweep to ignition
Normal operation Vctrl < 1 V for T1 and T2; fbtm = 43 kHz 42.21 42.90 44.59 kHz 1.05 0 10.2 1.4 20 1.75 1.6 40 3 s s mA mV
2.425 2.5
2.575 V
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Product data sheet
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CFL power IC
Table 6. Characteristics ...continued Tamb = 25 C; voltage on pin VS = 11 V; VFS - S1A and S1B voltage= 11 V, GLI and GLO voltage measured with respect to PGND; currents are positive when flowing into the IC; unless otherwise specified. Symbol Parameter Conditions Min IFS = 5 mA 0.6 Typ 2.7 1.0 Max 1.4 V Unit Ron(150)/Ron(25) on-state resistance ratio (150 C to 25 C) VFd(bs) feed forward Ri(RHV) Ii(RHV) fff fff(ratio) Rs RCPAV input resistance on pin RHV input current on pin RHV feed forward frequency feed forward frequency ratio series resistance resistance on pin CPAV during normal operation pin RHV current = 0.75 mA pin RHV current = 1 mA pin RHV current = 1 mA CPAV switch; pin CPAV current = 100 A used with CCPAV for averaging; CPAV pin current = 10 A
[7] [6]
bootstrap diode forward voltage
1.54 0 60.4 80.3 0.9 0.75 22.4
2.2
2.86 1
k mA kHz
63.6 84.5 1.0 1.5 32
66.15 kHz 88.2 1.1 2.25 41.6 k k
[1] [2] [3] [4] [5] [6] [7]
The start-up supply current is specified in a temperature (Tvj) range of 0 C to 125 C. For Tvj < 0 C and Tvj > 125 C the start-up supply current is < 350 A. The clamp margin is defined as the voltage difference between turn-on of the clamp and start of oscillation. The clamp is in the off-state at start of oscillation. Data sampling of Vth(capm) is performed at the end of conduction of T2. Data sampling of Vth(capm) is performed at the start of conduction of T2. Within the allowed range of RIREF, defined as 30 k +10%. The input current at pin RHV may increase to 1.6 mA during voltage transient on pin VDC. Only for pin RHV currents beyond approximately 550 mA the oscillator frequency is proportional to the pin RHV current. The symmetry is best calculated using fff(ratio) where fff(ratio) = T1 total time divided by the T2 total time with the T1 total time the time between turn-off of G2 and turn-off of G1, and the T2 total time the time between turn-off of G1 and turn-off of G2.
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CFL power IC
11. Application information
11.1 Design equations * Bottom frequency:
1 f btm = ---------------------------------------------------------------------------------------------------------- ( Hz ) 2 x [ ( C f + C par ) x ( X 1 x R IREF - R int ) ] + t
* Feed forward frequency:
1 f ff = ------------------------------------------------------------------------------------------------------------------------- ( Hz ) X 2 x V ref x R HV 2 x ( C f + C par ) x ---------------------------------------- - R int + t V i ( VDC ) Where: - X1 = 3.68 - X2 = 22.28 - t = 0.4 s - Rint = 3 k - Cpar = 4.7 pF - Vref = 2.5 V - Vi(VDC) = 300 V (nominal) - RHV = 560 K (see Figure 6)
* Operating frequency = fbtm(max), fff(max), and fcm(max)
Where: - fbtm = bottom frequency - fff(max) = maximum feed forward frequency - fcm(max) = maximum frequency due to capacitive mode detection
* Preheat time:
C CP R ref t ph = ----------------- x --------------- ( s ) 150 nF 30 k
* Ignition time:
15 t ign = ----- x t ph ( s ) 16
* Non-overlap time:
R ref t no = 1.4 s x --------------30 k
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11.2 Application diagram
L1 RHV
VDC GLI
RHV
CI
CI
DS1 DS2 C3
GLO CPAV
CCPAV
S1A
R1 230 V AC C2 L2
S1B
LAMP
CBOOT C5 CS7
UBA2025
FS
CF
CF
IREF
DS7
RIREF
DS3
DS4
C4
VS SGND
DS8 - Vshunt + RSHUNT CS9
PGND GND
RS
014aaa937
Fig 6. Table 7.
23 W CFL application diagram 23 W CFL application component values Component name DS1-DS4 DS7, DS8 R1 RIREF RHV RSHUNT Value IN4007 IN4148 10 30 k 560 k 1.1 1.8 mH 3 mH 5.6 H; 400 V 100 nF; 200 V 3.9 nF; 630 V 47 nF 100 nF 100 pF 100 nF; 400 V 150 pF; 400 V Description bridge rectifier limiting and charge pump inrush or fusistor reference start-up and feed forward frequency sensing (2 W) input mains filter resonant mains buffer DC blocking resonant integrating preheat and averaging internal reference oscillator bootstrap charge pump and dv/dt limiting
Component type diodes resistors
inductors capacitors
L1 L2 C2 C3, C4 C5 CI CCPAV CF CBOOT CS7
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CFL power IC
Table 7.
23 W CFL application component values Component name CS9 E27 CFL UBA2025T Value 100 nF 23 W SO16L, SOT162-1 Description decoupling CFL E27 type, 23 W control IC with integrated power MOSFETs
Component type capacitor CFL IC
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CFL power IC
12. Package outline
SO16: plastic small outline package; 16 leads; body width 7.5 mm SOT162-1
D
E
A X
c y HE vMA
Z 16 9
Q A2 A1 pin 1 index Lp L 1 e bp 8 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.1 A1 0.3 0.1 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 10.5 10.1 0.41 0.40 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.05 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 Z
(1)
0.9 0.4
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
0.035 0.004 0.016
8 o 0
o
Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. OUTLINE VERSION SOT162-1 REFERENCES IEC 075E03 JEDEC MS-013 JEITA EUROPEAN PROJECTION
ISSUE DATE 99-12-27 03-02-19
Fig 7.
UBA2025_1
Package outline SOT162-1 (SO16)
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CFL power IC
13. Abbreviations
Table 8. Acronym CFL NMOST MOSFET LS Abbreviations Description Compact Fluorescent Lamp Negative Channel Metal-Oxide Semiconductor Metal-Oxide-Semiconductor Field-Effect Transistors Low Side
14. Revision history
Table 9. Revision history Release date 20091016 Data sheet status Product data sheet Change notice Supersedes Document ID UBA2025_1
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15. Legal information
15.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
15.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
15.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
16. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
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CFL power IC
17. Contents
1 2 3 4 5 6 6.1 6.2 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 7.12 7.13 7.14 8 9 10 11 11.1 11.2 12 13 14 15 15.1 15.2 15.3 15.4 16 17 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Initial start-up . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Oscillation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Operation in preheat mode . . . . . . . . . . . . . . . . 4 Ignition state . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Failure to ignite . . . . . . . . . . . . . . . . . . . . . . . . . 5 Transition to the burn state . . . . . . . . . . . . . . . . 5 Feed forward frequency . . . . . . . . . . . . . . . . . . 6 Capacitive mode . . . . . . . . . . . . . . . . . . . . . . . . 6 IC supply. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Minimum gate source voltage of T1 and T2 . . . 6 Frequency and change in frequency. . . . . . . . . 7 Ground pins . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Charge coupling . . . . . . . . . . . . . . . . . . . . . . . . 7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8 Thermal characteristics. . . . . . . . . . . . . . . . . . . 8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Application information. . . . . . . . . . . . . . . . . . 11 Design equations . . . . . . . . . . . . . . . . . . . . . . 11 Application diagram . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 October 2009 Document identifier: UBA2025_1

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